Difference: Tutorial2ndTCADWorkshop (3 vs. 4)

Revision 42018-08-28 - AtlasjSilicon

 
META TOPICPARENT name="TCADSimulationInformation"

第二回TCADワークショップ

第一回の復習 (sdeとデバイスシミュレーション)

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物理モデルの紹介と実践

物理モデル

移動度 : TCADSiliconMobiliy

高電界効果 : TCADHighFieldSaturation

再結合 : TCADGeneralReconbination

driving force model(電場) : TCADDrivingForceModel

放射線ダメージのシミュレーション

表面電荷のシミュレーション : TCADIrradSurfaceDamage

バルク部のシミュレーション : TCADIrradBulkDamage

-- Koji Nakamura - 2018-08-20

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META FILEATTACHMENT attachment="sde01.png" attr="" comment="" date="1535452982" name="sde01.png" path="sde01.png" size="38407" user="AtlasjSilicon" version="1"
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