Difference: TCADSimulationInformation (7 vs. 8)

Revision 82017-04-08 - KojiNakamura

 

TCAD Simulation Information


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How to use Sentaurus TCAD (Technology Computer-Aided Design).

 
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README first

To use CERN/CLIC license

Basic Settings

##setup.sh##################################
#!/bin/sh
STROOT=/afs/cern.ch/eng/clic/software/Sentaurus
export STROOT
export PATH=$STROOT/bin:$PATH
export LM_LICENSE_FILE="(Licence you have recieved)"
export STDB="(Path to directory for TCAD workspace)"
#########################################

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 DooR
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References

 

Tips

Radiation damage

Surface damage
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<		To add surface charge, add the lines below to sdevice_des.cmd file.
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>		To add surface charge, add the lines below to sdevice_des.cmd file.
 
Physics(MaterialInterface="Oxide/Silicon"){
    Charge(Conc=1e12)
}

Free electrons inside silicon bulk are attracted by these positive charges.
Using visualize, you can see the electron accumulation near surface.

-- Hiromi Sawai - 2016-06-28 


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