TCADSimulationInformation < Main

---+ TCAD Simulation Information

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How to use Sentaurus TCAD (Technology Computer-Aided Design).
---++ README first
---+++ To use CERN/CLIC license

---++ Basic Settings

##setup.sh##################################<br />#!/bin/sh<br />STROOT=/afs/cern.ch/eng/clic/software/Sentaurus<br />export STROOT<br />export PATH=$STROOT/bin:$PATH<br />export LM_LICENSE_FILE="(Licence you have recieved)"<br />export STDB="(Path to directory for TCAD workspace)"<br />#########################################

---++ Useful Documents
   * <b>TCAD Sentaurus Tutorial</b><br /> http://nadin.miem.edu.ru/Sentaurus_Training_2014/index.html
   * <b style="background-color: transparent;">SIMDET2016<br /></b> [[https://indico.in2p3.fr/event/12967/other-view?view=standard]]
   * <b>TCAD Examples from git</b><br /> https://gitlab.cern.ch/TCADExamples <br />Especially, example for Charge Collection is,<br /> https://gitlab.cern.ch/TCADExamples/ChargeCollection
   * <b style="background-color: transparent;">Example made by Mathieu Benoit<br /></b>/afs/cern.ch/work/m/mbenoit/public/SimplePixel.gzp<br />Can import from AFS.
   * <b style="background-color: transparent;">LHCb TCAD Twiki (by Asmund Schiager Folkestad)<br /></b> https://lbtwiki.cern.ch/bin/view/VELO/TCAD
   * <b>Asmund Schiager Folkestad's page</b><br /> http://afolkestad.com/index.html

---++ Tips
---+++ Radiation damage
---+++++ Surface damage

To add surface charge, add the lines below to sdevice_des.cmd file.
<verbatim>Physics(MaterialInterface="Oxide/Silicon"){
    Charge(Conc=1e12)
}</verbatim>

Free electrons inside silicon bulk are attracted by these positive charges.<br />Using visualize, you can see the electron accumulation near surface.

-- %USERSIG{HiromiSawai - 2016-06-28}%

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This topic: Main > TCADSimulationInformation
Topic revision: r5 - 2017-03-02 - KojiNakamura