MIPがITk stripセンサーで落とす電荷量の計算メモ

Article text.

-- Shigeki Hirose - 2020-11-05

文献[1]のTable Vによると、MIP(250 MeV電子)の320 um厚シリコン中でのエネルギー損失のMPVの計算値は90.96 keV。同じ論文中にある"energy per ion pair, 3.68 eV for electrons"という数値を使い、またactive thicknessを300 umとすると、90.96 x 10^3 / 3.68 * (300/320) ~ 23000 electrons

[1] https://journals.aps.org/rmp/pdf/10.1103/RevModPhys.60.663

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Topic revision: r1 - 2020-11-05 - ShigekiHirose
 
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