
TCAD Simulation Information | ||||||||
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| How to use Sentaurus TCAD (Technology Computer-Aided Design). | ||||||||
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| > > | README firstTo use CERN/CLIC license | |||||||
Basic Settings##setup.sh###################################!/bin/sh STROOT=/afs/cern.ch/eng/clic/software/Sentaurus export STROOT export PATH=$STROOT/bin:$PATH export LM_LICENSE_FILE="(Licence you have recieved)" export STDB="(Path to directory for TCAD workspace)" ######################################### Useful Documents
TipsRadiation damageSurface damageTo add surface charge, add the lines below to sdevice_des.cmd file.Physics(MaterialInterface="Oxide/Silicon"){
Charge(Conc=1e12)
}
Free electrons inside silicon bulk are attracted by these positive charges.Using visualize, you can see the electron accumulation near surface. -- | ||||||||