Difference: TCADSimulationInformation (3 vs. 4)

Revision 42017-02-17 - HiromiSawai

 

TCAD Simulation Information

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<
How to use Sentaurus TCAD.
>
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How to use Sentaurus TCAD (Technology Computer-Aided Design).
 

Basic Settings

##setup.sh##################################
#!/bin/sh
STROOT=/afs/cern.ch/eng/clic/software/Sentaurus
export STROOT
export PATH=$STROOT/bin:$PATH
export LM_LICENSE_FILE="(Licence you have recieved)"
export STDB="(Path to directory for TCAD workspace)"
#########################################

Useful Documents

Tips

Radiation damage

Surface damage

To add surface charge, add the lines below to sdevice_des.cmd file.

Deleted:
<
<
 
Physics(MaterialInterface="Oxide/Silicon"){
    Charge(Conc=1e12)
}

Free electrons inside silicon bulk are attracted by these positive charges.
Using visualize, you can see the electron accumulation near surface.

-- Hiromi Sawai - 2016-06-28


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