Difference: TCADSimulationInformation (2 vs. 3)

Revision 32017-02-16 - HiromiSawai

  TCAD Simulation Information
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+SentaurusのTCADの使い方。
 基本的な設定
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+How to use Sentaurus TCAD.
 Basic Settings
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+##setup.sh##################################
#!/bin/sh
STROOT=/afs/cern.ch/eng/clic/software/Sentaurus
export STROOT
export PATH=$STROOT/bin:$PATH
export LM_LICENSE_FILE="取得したライセンス"
export STDB="どこか TCAD 専用のディレクトリを作ってそこへの path"
#########################################
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+##setup.sh##################################
#!/bin/sh
STROOT=/afs/cern.ch/eng/clic/software/Sentaurus
export STROOT
export PATH=$STROOT/bin:$PATH
export LM_LICENSE_FILE="(Licence you have recieved)"
export STDB="(Path to directory for TCAD workspace)"
#########################################
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+ 便利な資料
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+ Useful Documents
  TCAD Sentaurus Tutorial
 http://nadin.miem.edu.ru/Sentaurus_Training_2014/index.html
  SIMDET2016
 https://indico.in2p3.fr/event/12967/other-view?view=standard
  TCAD Examples from git
 https://gitlab.cern.ch/TCADExamples 
Especially, example for Charge Collection is,
 https://gitlab.cern.ch/TCADExamples/ChargeCollection
  Example made by Mathieu Benoit
/afs/cern.ch/work/m/mbenoit/public/SimplePixel.gzp
Can import from AFS.
  LHCb TCAD Twiki (by Asmund Schiager Folkestad)
 https://lbtwiki.cern.ch/bin/view/VELO/TCAD
  Asmund Schiager Folkestad's page
 http://afolkestad.com/index.html
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+ Tips 
 Radiation damage 
 Surface damage 

To add surface charge, add the lines below to sdevice_des.cmd file.

Physics(MaterialInterface="Oxide/Silicon"){
    Charge(Conc=1e12)
}

Free electrons inside silicon bulk are attracted by these positive charges.
Using visualize, you can see the electron accumulation near surface.
 --   Hiromi Sawai  - 2016-06-28 


 
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